creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 200 v v rms 24 31 35 42 63 70 105 140 v v dc 35 45 50 60 90 100 150 200 v i f(av) a i rrm a dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1308060 version: k13 mbr1035ct thru MBR10200CT taiwan semiconductor dual common cathode schottk y rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec to-220ab mechanical data case: to-220ab polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.88 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol mbr 1035 ct mbr 1045 ct mbr 1050 ct mbr 1060 ct mbr 1090 ct mbr 10100 ct mbr 10150 ct mbr 10200 ct unit maximum repetitive peak reverse voltage maximum rms voltage 10.5 maximum dc blocking voltage maximum average forward rectified current 10 peak repetitive forward current (rated vr, square wave, 20khz) i frm 10 a 0.80 v 0.57 0.65 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 120 a peak repetitive reverse surge current (note 1) 0.1 0.70 0.80 0.85 0.88 0.90 0.95 0.98 0.67 0.85 0.88 maximum instantaneous forward voltage (note 2) i f = 5 a, t j =25 i f = 5 a, t j =125 i f = 10 a, t j =25 i f = 10 a, t j =125 v f operating junction temperature range - 55 to +150 0.75 0.78 ma 15 10 voltage rate of change (rated v r ) 10000 0.75 storage temperature range - 55 to +150 maximum reverse current @ rated vr t j =25 t j =125 i r note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle 25 1.5 typical thermal resistance
part no. part no. mbr1060ct mbr1060ct mbr1060ct (ta=25 unless otherwise noted) document number: ds_d1308060 version: k13 mbr1035ct thru MBR10200CT taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing to-220ab description note 1: "xx" defines voltage from 35v (mbr1035ct) to 200v (MBR10200CT) mbr10xxct (note 1) prefix "h" c0 suffix "g" 50 / tube example preferred p/n aec-q101 qualified aec-q101 qualified green compound ratings and characteristics curves mbr1060ct c0 c0 mbr1060ct c0g packing code green compound code mbr1060cthc0 h c0 c0 g 0 1 2 3 4 5 6 0 50 100 150 average forward a current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductive load 0 30 60 90 120 150 180 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics tj=75 tj=125 tj=25 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 instantaneous forward current (a) forward voltage (v) fig. 3- typical forward characteristics pulse width=300 s 1% duty cycle mbr1050ct-1060ct mbr1035ct-1045ct mbr1090ct-10100ct mbr10150-10200ct
min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 13.19 14.79 0.519 0.582 h 2.41 2.67 0.095 0.105 i 4.42 4.76 0.174 0.187 j 1.14 1.40 0.045 0.055 k 5.84 6.86 0.230 0.270 l 2.20 2.80 0.087 0.110 m 0.35 0.64 0.014 0.025 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1308060 version: k13 marking diagram mbr1035ct thru MBR10200CT taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5- typical junction c apacitance f=1.0mhz vsig=50mvp-p 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration. (sec) fig. 6- typical transient thermal characteristics per leg
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